Silicon Carbide Plate

Boron Carbide Parts China, Advanced Ceramics Division supplies high-quality and competitive price advanced Silicon Carbide (SiC) Plate.

SKU: SiC-P

Silicon Carbide Plate, SiC Plates

Boron Carbide Parts China, advanced ceramics division provides sintered SiC plates, reaction bonded SiC plates and recrystallized SiC plate. Our recrystallized SiC products have high purity, while our reaction bonded and sintered silicon carbide balls have high mechanical strength.

Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to acid corrosion. Silicon carbide is an excellent ceramic material suitable for applications requiring good corrosion resistance and wear resistance.

Silicon Carbide Properties

Compound Formula	SiC
Molecular Weight	40.1
Appearance	Black
Melting Point	2,730° C (4,946° F) (decomposes)
Density	3.0 to 3.2 g/cm3
Electrical Resistivity	1 to 4 10x Ω-m
Poisson’s Ratio	0.15 to 0.21
Specific Heat	670 to 1180 J/kg-K

Silicon Carbide Plate Specifications

Type	Recrystallized SiC	Sintered SiC	Reaction Bonded SiC
Purity of Silicon Carbide	99.5%	98%	>88%
Max. Working Temp. (`C)	1650	1550	1300
Bulk Density (g/cm3)	2.7	3.1	>3
Appearance Porosity	<15%	2.5	0.1
Flexural strength (MPa)	110	400	380
Compressive strength (MPa)	>300	2200	2100
Thermal expansion (10^-6/`C)	4.6 (1200`C)	4.0 (<500`C)	4.4 (<500`C)
Thermal conductivity (W/m.K)	35~36	110	65
Main characteristics	High temp. High resistance. High purity	Fracture Toughness	Chemical Resistance

Advantages

-Large plate capability

-Purity and grain size consistency

-Quick turn capability and precision grinding

Packing of Silicon Carbide

Our Silicon Carbide Plate is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.